Plasma diagnostics of a SF6radiofrequency discharge used for the etching of silicon
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/19/i=6/a=014/pdf
Reference43 articles.
1. Negative ion–molecule reactions of SF4
2. Mass Spectral Intensities of Inorganic Fluorine-Containing Compounds
3. Plasma etching of polysilicon and Si3N4in SF6with some impact on MOS device characteristics
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