Graphene formed on SiC under various environments: comparison of Si-face and C-face-Reference-Cited by-同舟云学术

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Graphene formed on SiC under various environments: comparison of Si-face and C-face

Published:2012-03-29 Issue:15 Volume:45 Page:154001
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Srivastava N,He Guowei,Luxmi ,Mende P C,Feenstra R M,Sun Yugang

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference54 articles.

1. The growth and morphology of epitaxial multilayer graphene

2. Homogeneous large-area graphene layer growth on6H-SiC(0001)

3. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

4. Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments

5. Thermodynamics and Kinetics of Graphene Growth on SiC(0001)

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