Resonant tunneling transport in AlzGa1−zN/InxGa1−xN/AlzGa1−zN/InyGa1−yN quantum structures
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/48/i=38/a=385102/pdf
Reference33 articles.
1. Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
2. Terahertz intersubband transition in GaN/AlGaN step quantum well
3. Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors
4. Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors
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