Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors-Reference-Cited by-同舟云学术

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Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

Published:2012-10-05 Issue:11 Volume:12 Page:5691-5696
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

den Hertog M. I.¹,González-Posada F.²,Songmuang R.³,Rouviere J. L.⁴,Fournier T.¹,Fernandez B.¹,Monroy E.²

Affiliation:

1. Institut Néel CNRS/UJF UPR2940, BP 166, 25 rue des Martyrs, 38042 Grenoble cedex 9, France

2. CEA-CNRS Group “Nanophysique et Semi-conducteurs”, INAC-SP2M, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

3. CEA-CNRS Group “Nanophysique et Semi-conducteurs”, Institut Néel-CNRS, BP 166, 25 rue des Martyrs, 38042 Grenoble Cedex 9, France

4. CEA-INAC/UJF-Grenoble1 UMR-E, SP2M, LEMMA, PFNC-Minatec Grenoble F-38054, France

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl302890f

Reference55 articles.

1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

2. Nanowire-based one-dimensional electronics

3. Nanoelectronics from the bottom up

4. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

5. Tunable nanowire nonlinear optical probe

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