Crystallization and thermal stability of Sn-doped Ge2Sb2Te5phase change material-Reference-Cited by-同舟云学术

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Crystallization and thermal stability of Sn-doped Ge2Sb2Te5phase change material

Published:2008-10-06 Issue:21 Volume:41 Page:215402
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Lee Mei Ling,Yong Kok Thong,Gan Chee Lip,Ting Lee Hou,Muhamad Daud Sofian Bin,Shi L P

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/41/i=21/a=215402/pdf

Reference27 articles.

1. Reflectivity studies of the Te(Ge, As)-based amorphous semiconductor in the conducting and insulating states

2. Low-cost and nanoscale non-volatile memory concept for future silicon chips

3. Non-volatile memory technologies: emerging concepts and new materials

4. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

5. Nonvolatile high-density high-performance phase-change memory

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunable metasurfaces enabled by phase-change materials;Semiconductors and Semimetals;2024

2. Recent advances in doped Ge₂Sb₂Te₅ thin film based phase change memories;Materials Advances;2023

3. Low power reconfigurable multilevel nanophotonic devices based on Sn-doped Ge2Sb2Te5 thin films;Acta Materialia;2022-08

4. Ga doping induced structural and optical modification in $$\hbox {Ge}_{2}\hbox {Sb}_{2}\hbox {Te}_{5}$$ thin films;Journal of Materials Science: Materials in Electronics;2022-05-20

5. Phase change memory materials and their applications;Russian Chemical Reviews;2022

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