Strain evolution in hydrogen-implanted silicon
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/36/i=10A/a=336/pdf
Reference15 articles.
1. Basic mechanisms involved in the Smart-Cut® process
2. Wafer bonding and H-implantation mechanisms involved in the Smart-cut® technology
3. Spectroscopic studies of H-decorated interstitials and vacancies in thin-film silicon exfoliation
4. Mechanically induced Si layer transfer in hydrogen-implanted Si wafers
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