Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires-Reference-Cited by-同舟云学术

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Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires

Published:2014-09-11 Issue:39 Volume:47 Page:394003
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Johannes A,Noack S,Paschoal W,Kumar S,Jacobsson D,Pettersson H,Samuelson L,Dick K A,Martinez-Criado G,Burghammer M,Ronning C

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Tomographic analysis of dilute impurities in semiconductor nanostructures

2. Identification of an Intrinsic Source of Doping Inhomogeneity in Vapor–Liquid–Solid-Grown Nanowires

3. Effect of diborane on the microstructure of boron-doped silicon nanowires

4. Precursor evaluation forin situInP nanowire doping

5. Ion implantation in III–V compounds

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1. Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation;Nanomaterials;2022-02-11

2. RustBCA: A High-Performance Binary-Collision-Approximation Code for Ion-Material Interactions;Journal of Open Source Software;2021-08-31

3. Simulation study of surface sputtering and distribution of ions in silicon due to low-energy high-fluence cobalt irradiation;Surfaces and Interfaces;2021-06

4. Second order corrections to the sputter yield of a curved surface;Journal of Applied Physics;2021-05-21

5. Evaluation of carrier density and mobility in Mn ion-implanted GaAs:Zn nanowires by Raman spectroscopy;Nanotechnology;2020-02-27

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