Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology-Reference-Cited by-同舟云学术

Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology

Published:2008-09-19 Issue:19 Volume:41 Page:195110
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Zhao J Z,Liang H W,Sun J C,Bian J M,Feng Q J,Hu L Z,Zhang H Q,Liang X P,Luo Y M,Du G T

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/41/i=19/a=195110/pdf

Reference25 articles.

1. A comprehensive review of ZnO materials and devices

2. Intrinsicn-type versusp-type doping asymmetry and the defect physics of ZnO

3. p-type ZnO films by monodoping of nitrogen and ZnO-based p–n homojunctions

4. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

5. Hydrogen Effects on the Optical and Electrical Properties of ZnO Light-Emitting Diodes

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