Low temperature fast growth of nanocrystalline silicon films by rf-PECVD from SiH4/H2gases: microstructural characterization-Reference-Cited by-同舟云学术

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Low temperature fast growth of nanocrystalline silicon films by rf-PECVD from SiH4/H2gases: microstructural characterization

Published:2008-09-19 Issue:19 Volume:41 Page:195413
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Chen Cheng-Zhao,Qiu Sheng-Hua,Liu Cui-Qing,Wu Yan-Dan,Li Ping,Yu Chu-Ying,Lin Xuan-ying

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/41/i=19/a=195413/pdf

Reference20 articles.

1. The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport

2. Single-electron charging and periodic conductance resonances in GaAs nanostructures

3. Highly conductive and highly transparent n-type microcrystalline silicon thin films

4. The structure and properties of nanosize crystalline silicon films

5. Raman spectroscopy of B-doped microcrystalline silicon films

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3. Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma;Micromachines;2022-01-24

4. Characteristics of a radio frequency magnetized double-ring-shaped hollow cathode plasma source with permanent magnets for high-density hydrogen plasma generation;Vacuum;2021-11

5. Maintaining superior crystallinity and conductivity in boron-doped nc-Si ultra-thin films by hydrogen plasma treatment;Journal of Physics and Chemistry of Solids;2021-10

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