InGaN light-emitting diodes with band-pass-filter-like GaN : Si nanoporous structures
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/47/i=14/a=145101/pdf
Reference19 articles.
1. White Light Emission of Monolithic Carbon-Implanted InGaN–GaN Light-Emitting Diodes
2. Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire
3. Nitride-Based LEDs With 800<tex>$^circhboxC$</tex>Grown p-AlInGaN–GaN Double-Cap Layers
4. An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes
5. Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures
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