Low current density induced spin-transfer torque switching in CoFeB–MgO magnetic tunnel junctions with perpendicular anisotropy-Reference-Cited by-同舟云学术

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Low current density induced spin-transfer torque switching in CoFeB–MgO magnetic tunnel junctions with perpendicular anisotropy

Published:2011-09-14 Issue:40 Volume:44 Page:405001
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Meng H,Sbiaa R,Lua S Y H,Wang C C,Akhtar M A K,Wong S K,Luo P,Carlberg C J P,Ang K S A

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions

2. Low resistance spin-dependent magnetic tunnel junction with high breakdown voltage for current-induced-magnetization-switching devices

3. Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory

4. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning Surface Spin Polarization of CoFeB by Boron Diffusion Detected by Spin Resolved Photoemission;Chinese Physics Letters;2023-08-01

2. First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface;Journal of Magnetism and Magnetic Materials;2023-04

3. The magnetoresistance acquisition system of a perpendicular magnetic tunnel junction using LabVIEW software;Journal of Instrumentation;2023-04-01

4. Corrigendum to “Distribution of write error rate of spin-transfer-torque magnetoresistive random access memory caused by a distribution of junction parameters” [J. Magn. Magn. Mater. 563 (2022) 170012];Journal of Magnetism and Magnetic Materials;2023-01

5. Distribution of write error rate of spin-transfer-torque magnetoresistive random access memory caused by a distribution of junction parameters;Journal of Magnetism and Magnetic Materials;2022-12

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