Magnetism, electron transport and effect of disorder in CoFeCrAl-Reference-Cited by-同舟云学术

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Magnetism, electron transport and effect of disorder in CoFeCrAl

Published:2015-05-19 Issue:24 Volume:48 Page:245002
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Kharel P,Zhang W,Skomski R,Valloppilly S,Huh Y,Fuglsby R,Gilbert S,Sellmyer D J

Funder

Basic Energy Sciences

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/48/i=24/a=245002/pdf

Reference25 articles.

1. A window on the future of spintronics

3. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

4. Ferromagnetic semiconductors: moving beyond (Ga,Mn)As

5. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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2. Pressure induced modification of electronic and magnetic properties of MnCrNbAl and MnCrTaAl;AIP Advances;2024-01-01

3. Electronic, magnetic, and structural properties of NiFeMnAl;Journal of Physics: Condensed Matter;2023-11-16

4. Large Thermo-Spin Effects in Heusler Alloy-Based Spin Gapless Semiconductor Thin Films;ACS Applied Materials & Interfaces;2023-11-08

5. Vanishing of the anomalous Hall effect and enhanced carrier mobility in the spin-gapless ferromagnetic Mn2CoGa1−xAlx alloys;Journal of Applied Physics;2023-11-02

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