Characterization of interface states in a-Si : H/c-Si heterojunctions by an expression of the theoretical diffusion capacitance
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Electronic and structural properties of the amorphous/crystalline silicon interface
2. Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell
3. Characterization of the interface properties in a-Si : H/c-Si heterostructures by photoluminescence
4. Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy
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2. Electrical characterization and defect states analysis of Ag/ITO/MoOx/n-Si/LiFx/Al carrier selective contact solar cells processed at room-temperature;15th International Conference on Concentrator Photovoltaic Systems (CPV-15);2019
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4. An analytical model to explore open-circuit voltage of a-Si:H/c-Si heterojunction solar cells;Journal of Central South University;2016-03
5. Low temperature characteristic of ITO/SiOx/c-Si heterojunction solar cell;Journal of Physics D: Applied Physics;2015-08-05
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