Emission of X electrons from (110) GaAs activated to negative electron affinity
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/8/i=1/a=002/pdf
Reference5 articles.
1. High-field distribution function in GaAs
2. Electronic band structure and covalency in diamond-type semiconductors
3. Transport Properties of GaAs Obtained from Photoemission Measurements
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Energy-resolved study of the spin precession in photoemission from activated (110) GaAs;Physical Review B;1988-08-15
2. Photoemissive Materials;Physics of Thin Films - Advances in Research and Development;1982
3. Chapter 3 NEA Semiconductor Photoemitters;Semiconductors and Semimetals;1981
4. A comment on photoemission from negative-electron-affinity GaAsP with a direct or an indirect band-gap;Journal of Physics D: Applied Physics;1978-06-01
5. Electron emission from Si(100) negative electron affinity surfaces;Journal of Physics D: Applied Physics;1977-06-01
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