A comment on photoemission from negative-electron-affinity GaAsP with a direct or an indirect band-gap
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/11/i=8/a=010/pdf
Reference10 articles.
1. Electron emission from Si(100) negative electron affinity surfaces
2. Emission of X electrons from (110) GaAs activated to negative electron affinity
3. A study of emission from the (1,1,1) faces of GaAs negative electron affinity photoemitters
4. Emission from the (1,1,0) face of negative-electron affinity gallium arsenide
5. Interpretation of the surface boundary conditions in the diffusion model for NEA photoemission
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Energy- and spin-analysis of polarized photoelectrons from NEA GaAsP;Applied Physics A Solids and Surfaces;1983-03
2. Chapter 3 NEA Semiconductor Photoemitters;Semiconductors and Semimetals;1981
3. Quantum efficiency of InP field-assisted photocathodes;Journal of Applied Physics;1980
4. Photoemission study of negative‐electron‐affinity GaP;Journal of Applied Physics;1979-06
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