Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors-Reference-Cited by-同舟云学术

Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors

Published:2012-12-28 Issue:5 Volume:46 Page:055104
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Kim Hyo Jin,Park Se Yeob,Jung Hong Yoon,Son Byeong Geun,Lee Chang-Kyu,Lee Chul-Kyu,Jeong Jong Han,Mo Yeon-Gon,Son Kyoung Seok,Ryu Myung Kwan,Lee Sangyoon,Jeong Jae Kyeong

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/46/i=5/a=055104/pdf

Reference32 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Investigating the stability of zinc oxide thin film transistors

4. Stable indium oxide thin-film transistors with fast threshold voltage recovery

5. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

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