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A physics-based compact model of ferroelectric tunnel junction for memory and logic design

  • Published:2013-12-20 Issue:4 Volume:47 Page:045001
  • ISSN:0022-3727
  • Container-title:Journal of Physics D: Applied Physics
  • language:
  • Short-container-title:J. Phys. D: Appl. Phys.

Author:

Wang Zhaohao,Zhao Weisheng,Kang Wang,Bouchenak-Khelladi Anes,Zhang Yue,Zhang Youguang,Klein Jacques-Olivier,Ravelosona Dafiné,Chappert Claude

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Essential Characteristics of Memristors for Neuromorphic Computing;Advanced Electronic Materials;2022-10-25

2. Investigation of Local Ferroelectric Properties of Ultrathin Ferroelectric Films with Scanning Tunneling Microscopy;2022 International Conference on Electrical Engineering and Photonics (EExPolytech);2022-10-20

3. Non-linear I-V characteristics of Co/BTO/LSMO ferroelectric tunnel junction;2022 International Semiconductor Conference (CAS);2022-10-12

4. Flexible Ferroelectric Devices: Status and Applications;Advanced Functional Materials;2022-09

5. FerroCoin: Ferroelectric Tunnel Junction-Based True Random Number Generator;IEEE Transactions on Emerging Topics in Computing;2022
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