Temperature- and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/46/i=26/a=265304/pdf
Reference30 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers
3. Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature
4. Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence
5. Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
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