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Neutral species in inductively coupled SF6/SiCl4plasmas

  • Published:2009-05-15 Issue:11 Volume:42 Page:115206
  • ISSN:0022-3727
  • Container-title:Journal of Physics D: Applied Physics
  • language:
  • Short-container-title:J. Phys. D: Appl. Phys.

Author:

Duluard C Y,Ranson P,Pichon L E,Oubensaid E H,Pereira J,Lefaucheux P,Puech M,Dussart R

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Alternated process for the deep etching of titanium;Journal of Micromechanics and Microengineering;2014-06-23

2. Plasma cryogenic etching of silicon: from the early days to today's advanced technologies;Journal of Physics D: Applied Physics;2014-03-06

3. Alternating SiCl4/O2passivation steps with SF6etch steps for silicon deep etching;Journal of Micromechanics and Microengineering;2011-05-04

4. Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4and SF6;Japanese Journal of Applied Physics;2010-11-22

5. Deep GaN etching by inductively coupled plasma and induced surface defects;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-09
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