X-ray photo-emission and Auger spectra of damage induced by Ar+-ion etching at SiO2surfaces
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/20/i=8/a=022/pdf
Reference24 articles.
1. Chemical and electronic structure of the SiO2/Si interface
2. An XPS study of Si as it occurs in adsorbents, catalysts, and thin films
3. An Auger analysis of the SiO2‐Si interface
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