Dependence of electric potentials at trench surfaces on ion angular distribution in plasma etching processes-Reference-Cited by-同舟云学术

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Dependence of electric potentials at trench surfaces on ion angular distribution in plasma etching processes

Published:2016-02-08 Issue:10 Volume:49 Page:105203
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Palov A P,Mankelevich Yu A,Rakhimova T V,Baklanov M R

Funder

Russian Science Foundation

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=10/a=105203/pdf

Reference25 articles.

1. Plasma etching: Yesterday, today, and tomorrow

2. Prediction of a Radial Variation of Plasma Structure and Ion Distributions in the Wafer Interface in Two-Frequency Capacitively Coupled Plasma

3. New Phenomena of Charge Damage in Plasma Etching: Heavy Damage Only through Dense-Line Antenna

4. Charge Damage Caused by Electron Shading Effect

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2. Helium electron beam rf plasma for low-k surface functionalization;Journal of Vacuum Science & Technology B;2022-12

3. Non‐self‐sustained electron beam RF‐generated plasma in application for functional surface pretreatment;Plasma Processes and Polymers;2021-05-14

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