Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Visible InGaN/GaN Quantum-Dot Materials and Devices
2. Origin of Luminescence from InGaN Diodes
3. Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes
4. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
5. Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
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