Interfacial structure of epitaxial SrTiO3on Si: experiments and simulations-Reference-Cited by-同舟云学术

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Interfacial structure of epitaxial SrTiO3on Si: experiments and simulations

Published:2009-04-01 Issue:8 Volume:42 Page:085409
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Wang X F,Wang Juan,Li Quan,Moreno M S,Zhou X Y,Dai J Y,Wang Y,Tang D

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/42/i=8/a=085409/pdf

Reference24 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. High dielectric constant oxides

3. Field effect transistors with SrTiO3 gate dielectric on Si

4. Crystalline Oxides on Silicon: The First Five Monolayers

5. Two-dimensional growth of high-quality strontium titanate thin films on Si

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles study of the linear electro-optical response in strained SrTiO3;Physical Review Materials;2018-11-19

2. Epitaxial Systems Combining Oxides and Semiconductors;Molecular Beam Epitaxy;2018

3. A review of molecular beam epitaxy of ferroelectric BaTiO3films on Si, Ge and GaAs substrates and their applications;Science and Technology of Advanced Materials;2015-06-20

4. Focus on materials challenges for protection - environment and health;Science and Technology of Advanced Materials;2015-06-20

5. Epitaxial systems combining oxides and semiconductors;Molecular Beam Epitaxy;2013

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