Effect of the gate metal work function on water-gated ZnO thin-film transistor performance-Reference-Cited by-同舟云学术

Effect of the gate metal work function on water-gated ZnO thin-film transistor performance

Published:2016-06-01 Issue:27 Volume:49 Page:275101
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Singh Mandeep,Mulla Mohammad Yusuf,Santacroce Maria Vittoria,Magliulo Maria,Di Franco Cinzia,Manoli Kyriaki,Altamura Davide,Giannini Cinzia,Cioffi Nicola,Palazzo Gerardo,Scamarcio Gaetano,Torsi Luisa

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=27/a=275101/pdf

Reference51 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 °C

3. High Electrical Performance of Wet-Processed Indium Zinc Oxide Thin-Film Transistors

4. Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors

5. Stable, Solution-Processed, High-Mobility ZnO Thin-Film Transistors

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning Gate Potential Profiles and Current–Voltage Characteristics of Polymer Electrolyte-Gated Transistors by Capacitance Engineering;ACS Applied Materials & Interfaces;2024-04-09

2. Performance enhancement of aluminium-gated poly(3-hexylthiophene) transistors with polymer electrolyte/PMMA bilayer gate dielectrics;Polymer;2024-02

3. A Review on Progress, Challenges, and Prospects of Material Jetting of Copper and Tungsten;Nanomaterials;2023-08-10

4. A performance comparison between honey and water as electrolytic dielectrics for ZnO liquid-gated transistors;Applied Physics A;2023-03-20

5. Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors;Materials Science in Semiconductor Processing;2022-11