Rate constants for the reactions of SiH and SiH2with SiH4in a low-pressure SiH4plasma
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/28/i=9/a=027/pdf
Reference23 articles.
1. Measurement of Si atom density in radio‐frequency silane plasma using ultraviolet absorption spectroscopy
2. Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RF-Discharge Silane Plasma for the Chemical Vapor Deposition of a-Si:H Films
3. Measurement of SiH2Densities in an RF-Discharge Silane Plasmae Used in the Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Film
4. Laser-Induced-Fluorescence Detection of SiH2Radicals in a Radio-Frequency Silane Plasma
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