Methods of dislocation distribution analysis and inclusion identification with application to CdTe and (Cd, Zn)Te-Reference-Cited by-同舟云学术

Methods of dislocation distribution analysis and inclusion identification with application to CdTe and (Cd, Zn)Te

Published:1998-04-21 Issue:8 Volume:31 Page:1009-1016
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Rose D,Durose K,Palosz W,Szczerbakow A,Grasza K

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/31/i=8/a=012/pdf

Reference22 articles.

1. Growth of cadmium-zinc telluride crystals by controlled seeding “contactless” physical vapor transport

2. Growth of CdTe single crystals by vapour condensation on the surface of polycrystalline source material

3. A novel method of crystal growth by physical vapour transport and its application to CdTe

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