Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells-Reference-Cited by-同舟云学术

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Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells

Published:2008-03-20 Issue:8 Volume:41 Page:085107
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Hsu Chih-Chang,Lin Ja-Hon,Chen Ying-Shu,Lin Ying-Hsiu,Kuo Hao-Chung,Wang Shing-Chung,Hsieh Wen-Feng,Tansu Nelson,Mawst Luke J

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/41/i=8/a=085107/pdf

Reference31 articles.

1. Band Anticrossing in GaInNAs Alloys

2. Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime

3. High-performance 1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition

4. Long wavelength MOCVD grown InGaAsN–GaAsN quantum well lasers emitting at 1.378–1.41 [micro sign]m

5. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

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2. Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers;Applied Physics B;2011-09-01

3. Photoluminescence and spin relaxation of MnZnO/GaN-based light-emitting diodes;Thin Solid Films;2011-02

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