Charge trapping properties and retention time in amorphous SiGe/SiO2 nanolayers-Reference-Cited by-同舟云学术

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Charge trapping properties and retention time in amorphous SiGe/SiO2 nanolayers

Published:2013-02-07 Issue:9 Volume:46 Page:095306
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Vieira E M F,Diaz R,Grisolia J,Parisini A,Martín-Sánchez J,Levichev S,Rolo A G,Chahboun A,Gomes M J M

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/46/i=9/a=095306/pdf

Reference16 articles.

1. Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO2

2. Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure

3. Tunnel oxide thickness dependence of activation energy for retention time in SiGe quantum dot flash memory

4. Electrical and optical characteristics of silicon nanocrystal solar cells

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1. SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared;Scientific Reports;2020-02-24

2. Surface profile gradient in amorphous Ta2O5 semi conductive layers regulates nanoscale electric current stability;Applied Surface Science;2017-02

3. Reversible metal-insulator transition of Ar-irradiatedLaAlO3/SrTiO3interfaces;Physical Review B;2015-10-19

4. Characterization of interface defects in BiFeO3 metal–oxide–semiconductor capacitors deposited by radio frequency magnetron sputtering;Journal of Materials Science: Materials in Electronics;2015-05-09

5. Effects of temperature and deposition time on the structural and optical properties of Si1−Ge nanoparticles grown by low pressure chemical vapor deposition;Thin Solid Films;2015-03

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