Electrical decoupling effect on intermediate band Ti-implanted silicon layers-Reference-Cited by-同舟云学术

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Electrical decoupling effect on intermediate band Ti-implanted silicon layers

Published:2013-03-05 Issue:13 Volume:46 Page:135108
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Pastor D,Olea J,Prado A del,García-Hemme E,García-Hernansanz R,Mártil I,González-Díaz G

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/46/i=13/a=135108/pdf

Reference19 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

3. Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell

4. Engineering the Electronic Band Structure for Multiband Solar Cells

5. Intermediate bands versus levels in non-radiative recombination

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1. Transport mechanisms in hyperdoped silicon solar cells;Semiconductor Science and Technology;2022-11-16

2. Results: NLA Using a Long Pulse Duration XeCl Laser;Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals;2021

3. Origin of localization in Ti-doped Si;Physical Review B;2018-11-09

4. Vanadium supersaturated silicon system: a theoretical and experimental approach;Journal of Physics D: Applied Physics;2017-11-13

5. Sn-doped CdTe as promising intermediate-band photovoltaic material;Journal of Physics D: Applied Physics;2016-12-09

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