Origin of localization in Ti-doped Si-Reference-Cited by-同舟云学术

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Origin of localization in Ti-doped Si

Published:2018-11-09 Issue:17 Volume:98 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zhang Yi,Nelson R.,Tam K.-M.,Ku W.,Yu U.,Vidhyadhiraja N. S.,Terletska H.,Moreno J.,Jarrell M.,Berlijn T.

Funder

U.S. Department of Energy

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.98.174204/fulltext

Reference62 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept

3. Intermediate band solar cells: Recent progress and future directions

4. Understanding intermediate-band solar cells

5. Statistics of the Recombinations of Holes and Electrons

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1. Boosting Photovoltaic Efficiency in Double Quantum Well Intermediate Band-Solar Cells through Impurity Positioning;Energies;2023-11-23

2. Application of the locally self-consistent embedding approach to the Anderson model with non-uniform random distributions;Annals of Physics;2021-12

3. Non-local corrections to the typical medium theory of Anderson localization;Annals of Physics;2021-12

4. Electronic correlations and Fermi liquid behavior of intermediate-band states in titanium-doped silicon;Physical Review B;2021-11-15

5. Real Space Quantum Cluster Formulation for the Typical Medium Theory of Anderson Localization;Crystals;2021-10-22

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