Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy-Reference-Cited by-同舟云学术

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Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy

Published:1997-09-07 Issue:17 Volume:30 Page:2411-2420
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Chim W K,Chan D S H,Tao J M,Lou C L,Leang S E,Teow C K

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/30/i=17/a=007/pdf

Reference17 articles.

1. A reliable approach to charge-pumping measurements in MOS transistors

2. Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation

3. The "gated-diode" configuration in MOSFET's, a sensitive tool for characterizing hot-carrier degradation

4. Separation of interface and nonuniform oxide traps by the DC current-voltage method

5. Extended (1.1-2.9 eV) hot-carrier-induced photon emission in n-channel Si MOSFETs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Can physical analysis aid in device characterization?;Journal of Crystal Growth;2000-03

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