The influence ofin situphotoexcitation on a defect structure generation in Ar implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy-Reference-Cited by-同舟云学术

The influence ofin situphotoexcitation on a defect structure generation in Ar implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy

Published:2003-04-29 Issue:10A Volume:36 Page:A143-A147
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Chtcherbatchev K D,Bublik V T,Markevich A S,Mordkovich V N,Alves E,Barradas N P,Sequeira A D

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/36/i=10A/a=329/pdf

Reference16 articles.

1. Response of a Material: From Single Ions to Experimental Times and Fluences

2. Energy dependence of dechanneling due to dislocation loops

3. Axial dechanneling in compound crystals with point defects and defect analysis by RBS

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