Structural changes in ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/37/i=12/a=005/pdf
Reference42 articles.
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1. Observation of resonant exciton and correlated plasmon yielding correlated plexciton in amorphous silicon with various hydrogen content;Scientific Reports;2022-12-13
2. Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers;Acta Physica Sinica;2010
3. IR variable angle spectroscopic ellipsometry study of high dose ion-implanted and annealed silicon wafers;Journal of Applied Physics;2009-01
4. Optical and structural properties of implanted Si wafers: the effects of implantation energy and subsequent isochronal annealing temperature;Semiconductor Science and Technology;2006-06-28
5. Study of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry;Journal of Applied Physics;2006-06-15
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