Charge spill-out and work function of few-layer graphene on SiC(0 0 0 1)-Reference-Cited by-同舟云学术

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Charge spill-out and work function of few-layer graphene on SiC(0 0 0 1)

Published:2014-06-26 Issue:29 Volume:47 Page:295303
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Renault O,Pascon A M,Rotella H,Kaja K,Mathieu C,Rault J E,Blaise P,Poiroux T,Barrett N,Fonseca L R C

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=29/a=295303/pdf

Reference44 articles.

1. A roadmap for graphene

2. Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments

3. Epitaxial graphene: a new material

4. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

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