Imaging and measuring the electronic properties of epitaxial graphene with a photoemission electron microscope-Reference-Cited by-同舟云学术

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Imaging and measuring the electronic properties of epitaxial graphene with a photoemission electron microscope

Published:2022-01-07 Issue:1 Volume:131 Page:015303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Niefind F.¹²^ORCID,Bell H. G.¹^ORCID,Mai T.¹^ORCID,Hight Walker A. R.¹^ORCID,Elmquist R. E.³^ORCID,Pookpanratana S.¹^ORCID

Affiliation:

1. Nanoscale Device and Characterization Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA

2. Department of Chemistry and Biochemistry, University of Maryland College Park, College Park, MD, USA

3. Quantum Measurement Division, NIST, Gaithersburg, MD, USA

Funder

PREP UMD - NIST

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0076145

Reference42 articles.

1. X-ray spectro-microscopy of complex materials and surfaces

2. Peculiarities of imaging one- and two-dimensional structures in an emission electron microscope. 1. Theory

3. Imaging of three-dimensional objects in emission electron microscopy

4. Characterizing voltage contrast in photoelectron emission microscopy

5. Electrical and physical topography in energy-filtered photoelectron emission microscopy of two-dimensional silicon pn junctions

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Watching (De)Intercalation of 2D Metals in Epitaxial Graphene: Insight into the Role of Defects;Small;2023-11-02

2. Methodology and implementation of a tunable deep-ultraviolet laser source for photoemission electron microscopy;Ultramicroscopy;2023-11

3. Imaging local luminescence variations in CdSe0.1Te0.9 thin films grown by the colossal grain growth process;Cell Reports Physical Science;2023-08

4. Deep-UV photoemission electron microscopy for imaging nanoscale heterogeneity and defects in gallium nitride;Gallium Nitride Materials and Devices XVIII;2023-03-15

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