Temperature increase in nanostructured cells of a magnetic tunnel junction during current-induced magnetization switching
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/42/i=22/a=225003/pdf
Reference12 articles.
1. Current-driven excitation of magnetic multilayers
2. Emission of spin waves by a magnetic multilayer traversed by a current
3. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
4. Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
5. Toggle magnetoresistance random access memory based on magnetostatically coupled bilayers
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