Influence of crystallinity on the oxidation resistance of Ni–Al film used as diffusion barrier layer-Reference-Cited by-同舟云学术

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Influence of crystallinity on the oxidation resistance of Ni–Al film used as diffusion barrier layer

Published:2009-03-02 Issue:6 Volume:42 Page:065419
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Liu B T,Yan X B,Guo Y N,Cheng C S,Li F,Zhang X,Bian F,Zhang X Y

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/42/i=6/a=065419/pdf

Reference26 articles.

1. Ferroelectric Memories

2. The Physics of Ferroelectric Memories

3. Memories are made of …

4. Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering

5. Integration technology for ferroelectric memory devices

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Grain texture dependent charge transport behaviors and dielectric responses of BaTiO3 films fabricated on MgO substrates;Materials Research Bulletin;2022-01

2. Mixed-phase Ni–Al as barrier layer against perovskite oxides to react with Cu for ferroelectric memory with Cu metallization;Journal of Alloys and Compounds;2016-05

3. Effect of Rapid Thermal Annealing on Structural and Electrical Characteristics of Ni-Al-O Gate Dielectrics;Journal of Inorganic Materials;2011-03-10

4. Barrier Performance of Various Thick Polycrystalline Ni–Al Films for Integrating PbZr[sub 0.4]Ti[sub 0.6]O[sub 3] Capacitors on Si;Journal of The Electrochemical Society;2010

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