Helium Plasma Damage of Low-kCarbon Doped Silica Film: the Effect of Si Dangling Bonds on the Dielectric Constant
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics
Link
http://stacks.iop.org/1009-0630/16/i=11/a=09/pdf
Reference12 articles.
1. Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization
2. He plasma pretreatment effects on oxygen plasma-induced carbon loss and surface roughening in an ultralow-korganosilicate glass film
3. Interaction of vacuum ultraviolet light with a low-k organosilicate glass film in the presence of NH3
4. The effect of the CH4 plasma treatment on deposited SiOC(–H) films with low dielectric constant prepared by using TMS/O2 PECVD
5. The effect of oxygen content on bonding configuration and properties of low-k organosilicate glass dielectric film
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