Influence of Deposition Temperature on the Structure of Si3N4Thin Film Prepared by MWECR-PECVD
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics
Reference12 articles.
1. Epitaxial growth of c-GaN in the afterglow plasma region controlled by magnetic field using ECR plasma enhanced MOCVD
2. Intertwisted fibrillar diamond-like carbon films prepared by electron cyclotron resonance microwave plasma enhanced chemical vapour deposition
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