Improvement of Interfacial Adhesion Strength and Thermal Stability of Cu/p-SiC:H/SiOC:H Film Stack by Plasma Treatment on the Surface of Cu Film-Reference-Cited by-同舟云学术

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Improvement of Interfacial Adhesion Strength and Thermal Stability of Cu/p-SiC:H/SiOC:H Film Stack by Plasma Treatment on the Surface of Cu Film

Published:2012-07 Issue:7 Volume:14 Page:619-623
ISSN:1009-0630
Container-title:Plasma Science and Technology
language:
Short-container-title:Plasma Sci. Technol.

Author:

Liu Bo,Yang Jijun,Jiao Guohua,Xu Kewei

Publisher

IOP Publishing

Subject

Condensed Matter Physics

Reference20 articles.

1. Low dielectric constant materials for microelectronics

2. Comparison of characteristics and integration of copper diffusion-barrier dielectrics

3. New techniques to characterize properties of advanced dielectric barriers for sub-65nm technology node

4. A comparative study of low dielectric constant barrier layer, etch stop and hardmask films of hydrogenated amorphous Si-(C, O, N)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications;Nanomaterials;2022-12-06

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