Anomalous edge response of cadmium telluride-based photon counting detectors jointly caused by high-flux radiation and inter-pixel communication

Abstract

Abstract This work reports an edge enhancing effect experimentally observed in cadmium telluride (CdTe)-based photon counting detector (PCD) systems operated under the charge summing (CS) mode and irradiated by high-flux x-rays. Experimental measurements of the edge spread functions (ESFs) of a PCD system (100 μm pixel size, 88 ns deadtime) were performed at different input flux levels from 4.5 × 105 count per second (cps) mm−2 to 1.5 × 109 cps mm−2 for the single pixel mode (SP) and the CS mode. A theoretical model that incorporates the impacts of inter-pixel communications and the arbitration process involved in the CS mode was developed to help explain the physical origin of the observed edge enhancing effect. Compared with the monotonically increasing ESF of the SP mode, the ESF of the CS mode measured at high-flux levels shows a peak at an intermediate location (50 μm from the edge). The peak became more pronounced with increasing flux levels. The theoretically calculated ESFs agreed well with experimental results with relative errors less than 5% at all flux levels and tested. These results indicate that the anomalous edge enhancing effect is jointly caused by the pileup effect and the CS circuit that introduces negative correlations between adjacent pixels. When the input flux is high enough to deliver photons to multiple adjacent pixels within the same deadtime period, the CS mode may treat the coincident x-rays as shared charges and thus introduce count losses in addition to the well-known pileup count loss. When a high contrast object partially blocks certain pixels from x-rays, the adjacent unblocked pixels have an increased probability of registering counts as a result of the negative correlation. This leads to a peak on the ESF at a pixel-to-edge distance half of the pixel pitch.