Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/15/5/032/pdf
Reference13 articles.
1. AlGaN/AlN/GaN high-power microwave HEMT
2. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy
3. Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
4. Band parameters for III–V compound semiconductors and their alloys
5. A self‐consistent solution of Schrödinger–Poisson equations using a nonuniform mesh
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3. A Comprehensive Analysis of the 2-DEG Transport Properties in In x Al1 – x N/AlN/GaN Heterostructure: Experiments and Numerical Simulations;IEEE Transactions on Electron Devices;2020-12
4. Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures;Chinese Physics Letters;2017-12
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