New CMOS compatible super-junction LDMOST with n-type buried layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/16/12/033/pdf
Reference16 articles.
1. 3D RESURF double-gate MOSFET: A revolutionary power device concept
2. Optimization of the specific on-resistance of the COOLMOS/sup TM/
3. A new partial SOI power device structure with P-type buried layer
4. New thin-film power MOSFETs with a buried oxide double step structure
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1. The differences between N ‐ and N + buried layers in improving the breakdown voltage of RESURF LDMOSFETs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-12-10
2. Ultra-low specific on-resistance 700V LDMOS with a buried super junction layer;Superlattices and Microstructures;2018-01
3. New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage;Chinese Physics B;2015-02-26
4. An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS;Chinese Physics B;2014-11-28
5. High-voltage super-junction lateral double-diffused metal—oxide semiconductor with a partial lightly doped pillar;Chinese Physics B;2013-06
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