High density Al 2 O 3 /TaN-based metal–insulator–metal capacitors in application to radio frequency integrated circuits
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/16/9/051/pdf
Reference21 articles.
1. Annealing characteristics of ultra-thin high- K HfO 2 gate dielectrics
2. N-Doped LaAlO 3 /Si(100) Films with High- k , Low-Leakage Current and Good Thermal Stability
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3. High-Performance MIM Capacitors for a Secondary Power Supply Application;Micromachines;2018-02-04
4. Conduction mechanisms of MIM capacitors with ZrO2/SiO2/ZrO2 stacked dielectrics and Ni electrodes;Acta Physica Sinica;2017
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