N-Doped LaAlO 3 /Si(100) Films with High- k , Low-Leakage Current and Good Thermal Stability-Reference-Cited by-同舟云学术

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N-Doped LaAlO 3 /Si(100) Films with High- k , Low-Leakage Current and Good Thermal Stability

Published:2004-12-23 Issue:1 Volume:22 Page:182-184
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Wen-Feng Xiang,Hui-Bin Lu,Zheng-Hao Chen,Meng He,Xu-Bing Lu,Li-Feng Liu,Hai-Zhong Guo,Yue-Liang Zhou

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference16 articles.

1. Nitrogen plasma annealing for low temperature Ta2O5 films

2. Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2

3. Application of HfSiON as a gate dielectric material

4. Structure and dielectric properties of amorphous LaAlO3 and LaAlOxNy films as alternative gate dielectric materials

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-k Dielectric for Nanoscale MOS Devices;Outlook and Challenges of Nano Devices, Sensors, and MEMS;2017

2. A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process;Chinese Physics B;2013-11

3. A High Performance In 0.7 Ga 0.3 As MOSFET with an InP Barrier Layer for Radio-Frequency Application;Chinese Physics Letters;2013-03

4. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology;Progress in Materials Science;2011-07

5. Molecular beam deposition of LaAlO3 on silicon for sub-22nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerface;Microelectronic Engineering;2009-07

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