Island-growth of SiCGe films on SiC
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/16/11/053/pdf
Reference15 articles.
1. A Light-Activated SiC Darlington Transistor Using SiCGe as Base Layer
2. Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors
3. Hetero-epitaxial growth of SiCGe on SiC
4. Shape stability of TiSi2 islands on Si (111)
5. Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD
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2. Faceting transitions in crystal growth and heteroepitaxial growth in the anisotropic phase-field crystal model;Chinese Physics B;2012-11
3. Formation and evolution of micropipes in SiC crystals;CrystEngComm;2012
4. Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer;Chinese Physics B;2011-05
5. Formation and suppression of misoriented grains in 6H-SiC crystals;CrystEngComm;2011
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