Novel material for nonvolatile ovonic unified memory (OUM)–Ag 11 In 12 Te 26 Sb 51 phase change semiconductor-Reference-Cited by-同舟云学术

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Novel material for nonvolatile ovonic unified memory (OUM)–Ag 11 In 12 Te 26 Sb 51 phase change semiconductor

Published:2004-06-30 Issue:7 Volume:13 Page:1167-1170
ISSN:1009-1963
Container-title:Chinese Physics
language:
Short-container-title:Chinese Phys.

Author:

Bo Liu,Zhi-Tang Song,Ting Zhang,Song-Lin Feng,Fu-Xi Gan

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1009-1963/13/7/036/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of amorphous Ge2Sb2Te5removal during chemical mechanical planarization in acidic H2O2slurry;Chinese Physics B;2013-01

2. Nano-scale gap filling and mechanism of deposit—etch—deposit process for phase-change material;Chinese Physics B;2012-11

3. Scaling properties of phase-change line memory;Chinese Physics B;2012-09

4. Si 1 Sb 2 Te 3 phase change material for chalcogenide random access memory;Chinese Physics;2007-08

5. Study on the delamination of tungsten thin films on Sb 2 Te 3;Chinese Physics;2006-07-26

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