Mechanism of amorphous Ge2Sb2Te5removal during chemical mechanical planarization in acidic H2O2slurry
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=1/a=018503/pdf
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1. Phase Change Memory
2. Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride
3. Si 1 Sb 2 Te 3 phase change material for chalcogenide random access memory
4. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
5. Tuning the Crystallization Temperature of Amorphous Ge[sub 2]Sb[sub 2]Te[sub 5] by O and Si Recoil Implantation
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1. Nanowear of GeSbTe thin film under atmospheric environment;Applied Surface Science;2020-02
2. Chemical mechanical planarization of Ge 2 Sb 2 Te 5 using IC1010 and Politex reg pads in acidic slurry;Chinese Physics B;2014-07-31
3. Role of the Lysine as a Complexing Agent in Ge2Sb2Te5 Chemical Mechanical PolishingSlurries;Electrochimica Acta;2014-07
4. Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge 2 Sb 2 Te 5;Chinese Physics B;2014-04
5. Effect of the Hydrogen Peroxide on the Ti0.4Sb2Te3Chemical Mechanical Polishing in Acidic Slurry;ECS Journal of Solid State Science and Technology;2014
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