Schottky barrier MOSFET structure with silicide source/drain on buried metal
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/16/1/041/pdf
Reference21 articles.
1. CMOS scaling into the nanometer regime
2. Nanoscale CMOS
3. Device scaling limits of Si MOSFETs and their application dependencies
4. Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistors
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1. Layered Transition Metal Electride Hf2Se with Coexisting Two-Dimensional Anionic d-Electrons and Hf–Hf Metallic Bonds*;Chinese Physics Letters;2021-01-01
2. Performance Analyses of Planar Schottky Barrier MOSFETs with Dual Silicide Layers at Source/Drain on Bulk Substrates and Material Studies of ErSix/CoSi2/Si Stack Interface*;Chinese Physics Letters;2020-03-01
3. Effect of Double Junctions in Nano Structure Oxide Materials and Gas Sensitivity;Transactions on Electrical and Electronic Materials;2018-06-19
4. Experimental I – V and C – V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi 2 Contacts and Dopant Segregation;Chinese Physics Letters;2017-07
5. Optical properties of SiOC film by PL spectrometer and reflectance;Materials Research Bulletin;2012-10
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