Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS 2 field-effect transistors
Author:
Publisher
IOP Publishing
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://iopscience.iop.org/article/10.1088/2053-1583/aab672/pdf
Reference48 articles.
1. Tunnel field-effect transistors as energy-efficient electronic switches
2. The chips are down for Moore’s law
3. Single-layer MoS2 transistors
4. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
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